Search Results for &quot; IRLML2803TRPBF-1 &quot;

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

Obsolete

Max Operating Temperature: 150

IRLML6402GTRPBF

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

LEAD FREE, MICRO-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

IRLML5203GTRPBF

Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

IRLML6401GTRPBF

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOT-23

Continuous Drain Current (ID): -4.3A

Drain to Source Breakdown Voltage: -12V

Drain to Source Resistance: 50mR

+13

IRLMS6802

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

SMALL OUTLINE, R-PDSO-G6

Obsolete

Continuous Drain Current (ID): 5.6A

Drain to Source Voltage (Vdss): 20V

RoHS Compliant: No

IRLMS2002

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS2002

Mosfet, Power; N-ch; Vdss 20V; Rds(on) 0.03 Ohm; Id 6.5A; MICRO6; Pd 2W; Vgs +/-12V; -55D

Volume Production

Continuous Drain Current (ID): 6.5A

Current Rating: 6.5A

Drain to Source Voltage (Vdss): 20V

Lead Free: Contains Lead

IRLMS1503

INTERNATIONAL RECTIFIER IRLMS1503 MOSFET, N LOGIC MICRO-6

Not Recommended for New Design

Continuous Drain Current (ID): 3.2A

Drain to Source Voltage (Vdss): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRLM110ATF

Onsemi

N-CH MOSFET 100V 1.5A SOT-223 440mR RdsOn

Obsolete

Package/Case: SOT-223

Continuous Drain Current (ID): 1.5A

Current Rating: 1.5A

Drain to Source Breakdown Voltage: 100V

+23

IRLM110ATF

Fairchild

100V N-Channel Logic Level A-FET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL

Obsolete

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

IRLM120ATF

Fairchild

Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

IRLM210ATF

Onsemi

MOSFET N-CH 200V 770MA SOT-223

Obsolete

Package/Case: SOT-223-4

Continuous Drain Current (ID): 770mA

Current Rating: 770mA

Drain to Source Breakdown Voltage: 200V

+18

IRLMS2002TR

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS1503TR

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS6802TR

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Obsolete

Package/Case: LSOP

Continuous Drain Current (ID): 5.6A

Current Rating: -5.6A

Drain to Source Resistance: 50mR

+11

IRLMS1902TR

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

MICRO-6

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS6702TR

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

SMALL OUTLINE, R-PDSO-G6

Obsolete

Package/Case: LSOP

Continuous Drain Current (ID): 2.4A

Current Rating: -2.3A

Drain to Source Voltage (Vdss): 20V

IRLMS6702TR

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Active

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

IRLMS1902TR

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Package/Case: LSOP

Continuous Drain Current (ID): 3.2A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 300pF

IRLMS5703TR

Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6