
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.18Ohm; ID 8.1A; TO-220 Full-Pak; PD 30W
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN