960MHz RF Transceiver, SPI Interface, QFN, 200Kbps
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, CASE 376B-02, 2 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360C-05, 3 PIN
Electric Fuse, Fast Blow, 1.6A, 35A (IR), MICRO,
Trans RF MOSFET N-CH 65V 9A 4-Pin Case 316-01
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, M246, 3 PIN
Wide Band High Power Amplifier, 470MHz Min, 860MHz Max,
2.4GHz RF Transceiver, SPI, 3.3V, QFN, 625Kbps
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, L Band, Silicon, NPN, CASE 332A-03, 4 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, POWER, PLASTIC, CASE 466-02, 4 PIN
RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
FUSE BRD MNT 1.25A 250VAC RADIAL
RF Power Field-Effect Transistor
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
Receiver Module 155Mbps
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-360, CASE 360B-05, 2 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 458C-02, 2 PIN
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
