Search Results for &quot; MRF6V2150NBR5 &quot;

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

FLANGE MOUNT, R-PDFM-F4

Transferred

Max Operating Temperature: 225

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA

PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

Obsolete

Max Operating Temperature: 225

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

Rochester Electronics

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

Active

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

Pin Count: 2

RF MOSFET 110V 150W 220MHz N-CH TO-272

TO-272 W

LTB

Continuous Drain Current (ID): 2.5mA

Drain to Source Breakdown Voltage: 110V

Drain to Source Voltage (Vdss): 110V

Frequency: 220MHz

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

FLANGE MOUNT, R-PDFM-F4

Transferred

Max Operating Temperature: 225

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-272

Search Results for "MRF6V2150NBR5"

Filters

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

FLANGE MOUNT, R-PDFM-F4

Transferred

Max Operating Temperature: 225

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA

PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

Obsolete

Max Operating Temperature: 225

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

Rochester Electronics

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN

Active

Number of Terminals: 4

Terminal Position: DUAL

JEDEC Package Code: TO-270AA

Pin Count: 2

RF MOSFET 110V 150W 220MHz N-CH TO-272

TO-272 W

LTB

Continuous Drain Current (ID): 2.5mA

Drain to Source Breakdown Voltage: 110V

Drain to Source Voltage (Vdss): 110V

Frequency: 220MHz

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V