Search Results for "MSC1202Y2RHHTG4"

Digital Signal Processors & Controllers - DSP, DSC DSP StarCore 6-cores

ENCRYPTION PACSUN R2.1 783FCPBGA

Digital Signal Processor

OTHER DSP

Digital Signal Processors & Controllers - DSP, DSC DSP StarCore 6-cores

StarCore DSP, 6x 1GHz SC3850 cores, MAPLE-B2 accelerator, DDR2/3, SRIO, PCIe, CIPRI, SEC, -40-105C

OTHER DSP, PBGA783

Digital Signal Processors & Controllers - DSP, DSC DSP StarCore 6-cores

StarCore DSP, 6x 1GHz SC3850 cores, MAPLE-B accelerator, DDR2/3, SRIO, PCIe, QE, GbE, SEC, 0-105C

OTHER DSP

StarCore DSP, 6x1GHz SC3850 cores, MAPLE-B accelerator, DDR2/3, SRIO, PCIe, QE, GbE, SEC, -40-105C

Power Field-Effect Transistor, 254A I(D), 1200V, 0.0104ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 89A I(D), 1200V, 0.031ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

MICRIUM FSX-DRVR-MSCXXX-P-P1-SINGLE STACK, UC/FS DRIVER, MSC, SINGLE

Rectifier Diode, Schottky, 1 Phase, 2 Element, 50A, 1700V V(RRM), Silicon Carbide

Power Field-Effect Transistor, 124A I(D), 700V, 0.019ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 495A I(D), 1200V, 0.0052ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 254A I(D), 1200V, 0.0104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 254A I(D), 1200V, 0.0104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET