Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Inductor RF Chip Unshielded Wirewound 0.5uH 5% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Inductor RF Chip Unshielded Wirewound 0.5uH 2% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Board to Board & Mezzanine Connectors 24P PLG B2B .4mm PCH 1.0mm HEIGHT
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon,
Rectifier Diode, 1 Phase, 1 Element, 150A, 200V V(RRM), Silicon, R50, 1 PIN
P1812R Series 100 uH 10% 180 mA Non-Shielded SMT Power Inductor
Rectifier Diode, 1 Phase, 1 Element, 125A, 600V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.4KV 150A DO205
S1210R Series 1.8 uH 10 % 328 mA Shielded SMT Inductor
DIODE GEN PURP 1.2KV 150A DO205
SPD125 Series 330 uH 700 mA 20 % Shielded SMT Inductor
500mR 20W 1% TO-220 Thick Film Resistor
25W 0.5 Ohm 5% DPAK Thick Film Chip Resistor
Splitter, 0MHz Min, 15000MHz Max, ROHS COMPLIANT PACKAGE-3
Inductor Power Shielded Wirewound 0.5uH 20% 100KHz Iron 36A 0.0015Ohm DCR T/R
ABL Series 4 MHz ±50 ppm 20 pF -40 to +85 °C Microprocessor Crystal
Rectifier Diode, 1 Phase, 1 Element, 100A, 200V V(RRM), Silicon, R50, 1 PIN
Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-8,
