FR-E740-230 / 300SC 50 A, FFR-MSH-300-50A-RF1, Mitsubishi Electric
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Trans MOSFET N-CH Si 60V 50A
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FR-E740-060 / 095SC 16 A, FFR-MSH-095-16A-RF1, Mitsubishi Electric
Rectifier Diode, 1 Element, 20A, 350V V(RRM),
Array/Network Resistor, Isolated, Thin Film, 0.6W, 10000ohm, 50V, 1% +/-Tol, 150ppm/Cel, Surface Mount, 1620, SOIC, ROHS COMPLIANT
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Array/Network Resistor, Isolated, Thin Film, 0.75W, 22ohm, 50V, 1% +/-Tol, 150ppm/Cel, Surface Mount, 1620, QSOP, ROHS COMPLIANT
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Cap Ceramic 20pF 50V C0G 2% Pad SMD 0603 125°C Low ESR T/R
Cap Ceramic 4.7pF 25V C0G 0.25pF Pad SMD 0402 125°C Low ESR T/R
Cap Ceramic 15pF 50V C0G 1% Pad SMD 0402 125°C Low ESR T/R
Cap Ceramic 4pF 50V C0G 0.25pF Pad SMD 0402 125°C Low ESR T/R
Cap Ceramic 9pF 50V C0G 0.1pF Pad SMD 0402 125°C Low ESR T/R
Cap Ceramic 2.7pF 50V C0G 0.1pF Pad SMD 0402 125°C T/R
Cap Ceramic 4pF 50V C0G 0.05pF Pad SMD 0402 125°C Low ESR T/R
