FR-E740-060 / 095SC 16 A, FFR-MSH-095-16A-RF1, Mitsubishi Electric
FR-E740-230 / 300SC 50 A, FFR-MSH-300-50A-RF1, Mitsubishi Electric
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Trans MOSFET N-CH Si 60V 45A
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Trans MOSFET N-CH Si 60V 50A
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
FILTER FR-S 540 2, 2KW TO 3, 7
RF Transformer,
Rectifier Diode, 1 Element, 20A, 350V V(RRM),
Array/Network Resistor, Isolated, Thin Film, 0.6W, 10000ohm, 50V, 1% +/-Tol, 150ppm/Cel, Surface Mount, 1620, SOIC, ROHS COMPLIANT
Rectifier Diode, 1 Phase, 1 Element, 20A, 350V V(RRM), Silicon, TO-263AB, LPDS, TO-263S, 3/2 PIN
Rectifier Diode, 1 Element, 1A, 400V V(RRM),
Array/Network Resistor, Isolated, Thin Film, 0.75W, 22ohm, 50V, 1% +/-Tol, 150ppm/Cel, Surface Mount, 1620, QSOP, ROHS COMPLIANT
Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB, SC-83, TO-263S, D2PAK-3/2
1A 200V SMD Rectifier Diode, 25ns RR
DIODE GEN PURP 200V 1A PMDS
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
