SIGNAL DIODE
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
MOSFET 75V N-Ch PowerTrench MOSFET
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, TO-262AB, 3 PIN
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, I2PAK-3
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, LEAD FREE PACKAGE-3
DIODE GEN PURP 1KV 1A DO214AC
REMOTE CONTROL SYS, FM, 1-CH, 230VAC
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, SMBF, 2 PIN
MOSFET 75V N-Ch PowerTrench
Trans IGBT Chip N-CH 1000V 60A 170000mW 3-Pin(3+Tab) TO-3PL
LACING TAPE BRD FIBERGLASS 200LB
Trans IGBT Chip N-CH 900V 60A 170000mW 3-Pin(3+Tab) TO-3PL
Trans IGBT Chip N-CH 600V 30A 75000mW 3-Pin(3+Tab) TO-3P(N)IS
Trans IGBT Chip N-CH 600V 50A 130000mW 3-Pin(3+Tab) TO-3PL