IGBT, MODULE, 1.2KV, 159A; Transistor Polarity:Six NPN; DC Collector Current:159A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20; Packaging:Each ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN
IGBT, MODULE, 1.2KV, 160A
IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS
DIODE, STANDARD, 190A, DUAL - More Details
RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
IGBT, MODULE, 1.2KV, 231A
IGBT, MODULE, 1.2KV, 232A
IGBT, MODULE, 1.2KV, 232A; Transistor Polarity:NPN; DC Collector Current:232A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:12; Packaging:Each ;RoHS Compliant: Yes
SEMIKRON SEMIX341D16S Bridge Rectifier Diode, Three, 1.6 V, 340 A, Module, 1.75 V, 5 Pins
DIODE, POWER MODULE, 232A, 1.6KV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):232A; Forward Voltage VF Max:2.09V; No. of Pins:5Pins; Operating Temperature Max:150 C; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 323A
IGBT, MODULE, 1.2KV, 310A; Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 800A
IGBT, MODULE, 1.2KV, 596A
IGBT, MODULE, 1.2KV, 673A
