Search Results for "SKIIP21NEB063T1"

Trench IGBT Transistor

IGBT, MODULE, 1.7KV, 1.159KA; Transistor Polarity:Quad NPN; DC Collector Current:1.159kA; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 70A; Transistor Polarity:-; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):-; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Operating Temperature Max:- ;RoHS Compliant: Yes

Half Bridge Based Peripheral Driver, 0.05A,

Trench IGBT Transistor

Insulated Gate Bipolar Transistor, 115A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN

Trench IGBT Transistor

Half Bridge Based Peripheral Driver

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN

Half Bridge Based Peripheral Driver, 3000A

IGBT, MODULE, 1.2KV, 81A, MINISKIIP-3; Transistor Polarity:-; DC Collector Current:81A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 18A; DC Collector Current:18A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Operating Temperature Max:175°C; Packaging:Each ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 12A; DC Collector Current:12A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Operating Temperature Max:150°C; Packaging:Each ;RoHS Compliant: Yes

Trench IGBT Transistor

MOSFET N-CH 100V 34A TO-263

MOSFET N-CH 100V 66A TO-263

MOSFET N-CH 30V 80A TO-263

MOSFET N-CH 40V 80A TO-263

MOSFET N-CH 75V 46A TO-263

MOSFET N-CH 60V 57A TO-263