Power Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, STA, SIP-10
Power Field-Effect Transistor, 6A I(D), 120V, 0.25ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LF412, 10 PIN
Power Field-Effect Transistor, 3A I(D), 47V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Trans Voltage Suppressor Diode, 9000W, 5.6V V(RWM), Unidirectional, 1 Element, Silicon,