VISHAY SUM25P10-138-E3 MOSFET Transistor, P Channel, -16.7 A, -100 V, 0.115 ohm, -10 V
Rectifier Diode, 1 Element, 0.4A, 9000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Rectifier Diode, 1 Element, 0.4A, 3500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Rectifier Diode, 1 Element, 0.4A, 6000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Rectifier Diode, 1 Element, 0.4A, 4000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor, 40A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
TRANSISTOR 34 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN