Search Results for "VMM6212BYDB0-R(LENOVO)"

Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Conn Socket Strip RCP 34 POS 2mm Solder ST Through Hole Tube

MICRO VIDEO PATCH CR

Specialized Cables MICRO PTCH CRD PRPL

Specialized Cables MICRO VIDEO PATCH CR

Specialized Cables MICRO PTCH CRD PRPL

Specialized Cables MICRO VIDEO PATCH CR

Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Power Field-Effect Transistor, 20A I(D), 450V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Trans MOSFET N-CH 200V 45A 6-Pin TO-240AA

Power Field-Effect Transistor, 85A I(D), 900V, 0.076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Power Field-Effect Transistor, 290A I(D), 300V, 0.0074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Power Field-Effect Transistor, 1000A I(D), 100V, 0.0012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

RF Amplifier, 0.5-18GHz, 12dB Gain, 3.5dB NF, GAAS, SMT

Wide Band Low Power Amplifier, 1000MHz Min, 6000MHz Max, 1 Func, GAAS, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, WLP0402, SMT, 2 PIN

RF FET, GaAs, 12GHz, 5V, 1dB NF, 11dB Gain, SMD

Wide Band Low Power Amplifier, 900MHz Min, 11000MHz Max, 1 Func, GAAS, 1 X 0.50 MM, 0.25 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, WLP 0402

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3

RF Amplifier, 500MHz-6GHz, 14dB Gain, 2dB NF, 3.3V, 0402 SMT

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3