N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 1.2 Ohm typical drain-source resistance (1.6 Ohm max) and 25W power dissipation. Designed for efficient switching, it exhibits turn-on delay of 16ns and fall time of 25ns. Housed in a TO-220FP package, it operates from -55°C to 150°C and is RoHS compliant.
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Stmicroelectronics STP5NK60ZFP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 690pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16ns |
| Width | 4.6mm |
| RoHS | Compliant |
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