4A, 60V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8
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Stmicroelectronics STS4DNF60 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 315pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
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