RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Dual N-Channel RF Transistor, 2-Tone Class-AB, 104V, 860MHz, SOT-539A
N-Channel MOSFET, 38A, 104V, 860MHz, -65°C to 150°C, Surface Mount
N-CHANNEL MOSFET, 38A, 104V, 860MHz, 1.9V Vgs, 20-Piece Rail/Tube