Search Results for &quot; FDMC6675BZ &quot;

P-Channel MOSFET, -30V, 9.5A, 14.4mR, Surface Mount

MLP, 8 PIN

Not Recommended

Continuous Drain Current (ID): 9.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 14.4mR

Drain to Source Voltage (Vdss): 30V

Fairchild

Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

SMALL OUTLINE, S-PDSO-N5

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Pin Count: 8

FDMC6675BZ_F126

MOSFET -30V P-CH PwrTrench

Obsolete

Continuous Drain Current (ID): -9.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 14.4mR

Max Operating Temperature: 150°C

FDMC6675BZ_F125

MOSFET -30V P-CH PwrTrench

Obsolete

Continuous Drain Current (ID): -9.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 14.4mR

Max Operating Temperature: 150°C

FDMC6675BZ_F127

MOSFET -30V P-CH PwrTrench

Obsolete

Continuous Drain Current (ID): -9.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 14.4mR

Max Operating Temperature: 150°C

Search Results for "FDMC6675BZ"

Filters

P-Channel MOSFET, -30V, 9.5A, 14.4mR, Surface Mount

MLP, 8 PIN

Not Recommended

Continuous Drain Current (ID): 9.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 14.4mR

Drain to Source Voltage (Vdss): 30V

Fairchild

Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

SMALL OUTLINE, S-PDSO-N5

Transferred

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Pin Count: 8

FDMC6675BZ_F126

MOSFET -30V P-CH PwrTrench