Search Results for &quot; FDS6675BZ &quot;

P-Channel MOSFET -30V, 11A, 13mΩ, SOIC, SMT

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 10.8mR

P-Channel JFET, 11A ID, 30V, 1-Element, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

30V 25V Gate Source FET, 11mA ID, 2.5W SO Package

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 11mA

Drain to Source Resistance: 10.8mR

Drain to Source Voltage (Vdss): 30V

P-Channel MOSFET, -30V, 14.5A, 7.8mΩ, SOIC, SMT

SOP-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 14.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 6.5mR

FDS6673BZ-F085

P-Channel MOSFET -30V, 14.5A, 7.8mΩ, SOIC

SMALL OUTLINE, R-PDSO-G8

End Of Life

Package/Case: SOIC

Continuous Drain Current (ID): 14.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 6.5mR

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

30V 25V Gate Source 14.5mA Drain Current SO Package FET

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 14.5mA

Drain to Source Resistance: 6.5mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

-30V, -14.5A, 7.8mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Search Results for "FDS6675BZ"

Filters

P-Channel MOSFET -30V, 11A, 13mΩ, SOIC, SMT

SMALL OUTLINE, R-PDSO-G8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 11A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 10.8mR

P-Channel JFET, 11A ID, 30V, 1-Element, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

30V 25V Gate Source FET, 11mA ID, 2.5W SO Package

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 11mA

Drain to Source Resistance: 10.8mR

Drain to Source Voltage (Vdss): 30V

P-Channel MOSFET, -30V, 14.5A, 7.8mΩ, SOIC, SMT

SOP-8

Active

Package/Case: SOIC

Continuous Drain Current (ID): 14.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 6.5mR

FDS6673BZ-F085

P-Channel MOSFET -30V, 14.5A, 7.8mΩ, SOIC

SMALL OUTLINE, R-PDSO-G8

End Of Life

Package/Case: SOIC

Continuous Drain Current (ID): 14.5A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 6.5mR

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

30V 25V Gate Source 14.5mA Drain Current SO Package FET

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 14.5mA

Drain to Source Resistance: 6.5mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Pin Count: 8

-30V, -14.5A, 7.8mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL