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P-Channel JFET, -20V, -3.7A, 75mΩ, Surface Mount

1 X 1 MM, 0.40 MM HEIGHT, ROHS COMPLIANT, ULTRA THIN, WL-CSP-4

Active

Continuous Drain Current (ID): 3.7A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 100mR

Drain to Source Voltage (Vdss): 20V

P-Channel MOSFET, -20V, -3.7A, 78mΩ, Surface Mount

1 X 1 MM, ROHS COMPLIANT, ULTRA THIN, WL-CSP-4

Active

Continuous Drain Current (ID): 3.7A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 143mR

Drain to Source Voltage (Vdss): 20V

P-Channel JFET, -20V, -2.6A, 140mΩ, Surface Mount

0.80 X 0.80 MM, ROHS COMPLIANT, THIN, WL-CSP-4

Active

Continuous Drain Current (ID): 2.6A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 140mR

Drain to Source Voltage (Vdss): 20V

P-Channel JFET, -20V, -3A, 85mR, Surface Mount

ROHS COMPLIANT, ULTRA THIN, WL-CSP-6

End Of Life

Continuous Drain Current (ID): 3A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 85mR

Drain to Source Voltage (Vdss): 20V

Small Signal Field-Effect Transistor

Active

Drain to Source Breakdown Voltage: -20V

Gate to Source Voltage (Vgs): 1.5V

Packaging: Tape and Reel

Polarity: P-CHANNEL