Search Results for &quot; FQI7N60TU &quot;

600V N-Channel Power MOSFET, 7.4A, 1Ω, TO-262

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 7.4A

Current Rating: 7.4A

Drain to Source Breakdown Voltage: 600V

N-Channel QFET® MOSFET 600V, 7.4A, 1Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 6.6A

Current Rating: 6.6A

Drain to Source Breakdown Voltage: 800V

FQI7N10TU

Trans MOSFET N-CH 100V 7.3A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 7.3A

Current Rating: 7.3A

Drain to Source Breakdown Voltage: 100V

FQI7N40TU

N-Channel Power MOSFET 400V 7A 3.13W Rail/Tube

Obsolete

Continuous Drain Current (ID): 7A

Drain to Source Breakdown Voltage: 400V

Drain to Source Resistance: 800mR

Fall Time: 50ns

FQI7N20TU

MOSFET

Obsolete

Continuous Drain Current (ID): 6.6A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 690mR

Fall Time: 35ns

N-Channel QFET® MOSFET 800V, 6.6A, 1.5Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

ROHS COMPLIANT, I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Rochester Electronics

Transistor, mosfet, n-Channel, 800V V(Br)Dss, 6.6A I(D), to-262Aa Rohs Compliant: Yes

Unknown

Search Results for "FQI7N60TU"

Filters

600V N-Channel Power MOSFET, 7.4A, 1Ω, TO-262

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 7.4A

Current Rating: 7.4A

Drain to Source Breakdown Voltage: 600V

N-Channel QFET® MOSFET 600V, 7.4A, 1Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 6.6A

Current Rating: 6.6A

Drain to Source Breakdown Voltage: 800V

FQI7N10TU

Trans MOSFET N-CH 100V 7.3A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 7.3A

Current Rating: 7.3A

Drain to Source Breakdown Voltage: 100V

FQI7N40TU

N-Channel Power MOSFET 400V 7A 3.13W Rail/Tube

Obsolete

Continuous Drain Current (ID): 7A

Drain to Source Breakdown Voltage: 400V

Drain to Source Resistance: 800mR

Fall Time: 50ns

FQI7N20TU

MOSFET

Obsolete

Continuous Drain Current (ID): 6.6A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 690mR

Fall Time: 35ns

N-Channel QFET® MOSFET 800V, 6.6A, 1.5Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

ROHS COMPLIANT, I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Rochester Electronics

Transistor, mosfet, n-Channel, 800V V(Br)Dss, 6.6A I(D), to-262Aa Rohs Compliant: Yes