Search Results for &quot; IRF6644TR1 &quot;

Trans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R

Obsolete

Continuous Drain Current (ID): 10.3A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 10.3MR

N-CHANNEL HEXFET 100V 10.3A Surface Mount

Obsolete

Continuous Drain Current (ID): 10.3A

Current Rating: 10.3A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 10.3mR

Infineon

Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -40

Terminal Position: BOTTOM

Search Results for "IRF6644TR1"

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IRF6644TR1

Trans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R

Obsolete

Continuous Drain Current (ID): 10.3A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 10.3MR

N-CHANNEL HEXFET 100V 10.3A Surface Mount

Obsolete

Continuous Drain Current (ID): 10.3A

Current Rating: 10.3A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 10.3mR

Infineon

Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,