Power Field-Effect Transistor, 32A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-8
N CHANNEL, MOSFET, 200V, 32A, DIRECTFET MX, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:7 ;RoHS Compliant: Yes
25V 32A N-CH MOSFET, 1.8mR RdsOn, 7-Pin Direct-FET
150V 4.9A HEXFET Surface Mount Power MOSFET
Power Field-Effect Transistor, 36A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
Power Field-Effect Transistor, 4.9A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, MZ, ISOMETRIC-3
Power Field-Effect Transistor, 3.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
MOSFET 25V SINGLE N-CH 20V VGS MAX
Power Field-Effect Transistor, 32A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-8
200V 19A Surface Mount HEXFET MOSFET
