
INTERNATIONAL RECTIFIER IRF7456PBF MOSFET Transistor, N Channel, 16 A, 20 V, 6.5 mohm, 10 V, 2 V
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
N CHANNEL MOSFET, 20V, 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2.5W;RoHS Compliant: Yes

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8