120A 300V N-Channel GigaMOS MOSFET, TO-264-3, Through Hole
Power Field-Effect Transistor,
120A 300V HiPerFET MOSFET, TO-264-3 Package, Through Hole Mount
Power Field-Effect Transistor, 160A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
120A 300V N-Channel GigaMOS MOSFET, TO-247-3, -55°C to 150°C
