Search Results for &quot; IXFN32N100P &quot;

N-Channel MOSFET, 1000V, 27A, 320mR, SOT-227

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 320mR

N-Ch MOSFET, 1000V, 27A, 0.32Ω, 1-Element, 4-Pin

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

1000V 38A N-Channel MOSFET, 210mR RdsOn, PLASTIC

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 38A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 210mR

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 310mR

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 320mR

N-CHANNEL MOSFET, 18A, 1kV, 340mR, Through Hole, ISOPLUS247

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 340mR

Drain to Source Voltage (Vdss): 1kV

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 38A I(D), 1000V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 1000V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXFN32N100P"

Filters

N-Channel MOSFET, 1000V, 27A, 320mR, SOT-227

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 320mR

N-Ch MOSFET, 1000V, 27A, 0.32Ω, 1-Element, 4-Pin

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

1000V 38A N-Channel MOSFET, 210mR RdsOn, PLASTIC

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 38A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 210mR

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 310mR

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 320mR

N-CHANNEL MOSFET, 18A, 1kV, 340mR, Through Hole, ISOPLUS247

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 340mR

Drain to Source Voltage (Vdss): 1kV

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 38A I(D), 1000V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 18A I(D), 1000V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4