Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Silicon Controlled Rectifier, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AA