Search Results for &quot; JANTX2N6758 &quot;

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3

Volume Production

Package/Case: TO-3

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

TO-3, 2 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-204AA

MOSFET N-CH TO-204AA TO-3

End of Life

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 6A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 300mR

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18

CERAMIC, LCC-18

Obsolete

Package/Case: CLCC

Continuous Drain Current (ID): 5.5A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Obsolete

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 5.5A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

MOSFET N-CH TO-205AF TO-39

Obsolete

Package/Case: TO-39

Continuous Drain Current (ID): 6A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

CHIP CARRIER, R-CQCC-N15

Transferred

Continuous Drain Current (ID): 5.5A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Max Operating Temperature: 125°C

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Lead Free: Contains Lead

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Mount: Through Hole

Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

HERMETIC SEALED, MODIFIED TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

TO-3, 2 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-204AA

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Omnirel

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN

HERMETIC SEALED, TO-205, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

CHIP CARRIER, R-CQCC-N15

Active

Max Operating Temperature: 150

Number of Terminals: 15

Terminal Position: QUAD

Number of Elements: 1

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

FLANGE MOUNT, O-MBFM-P2

Transferred

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 125°C

Min Operating Temperature: -55°C

Intersil

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

RoHS Compliant: No

MOSFET N-CH 200V 9A

Obsolete

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Contact Manufacturer

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Contact Manufacturer

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

Vishay(Siliconix)

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Obsolete

Max Operating Temperature: 150

Search Results for "JANTX2N6758"

Filters

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3

Volume Production

Package/Case: TO-3

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

TO-3, 2 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-204AA

MOSFET N-CH TO-204AA TO-3

End of Life

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 6A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 300mR

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18

CERAMIC, LCC-18

Obsolete

Package/Case: CLCC

Continuous Drain Current (ID): 5.5A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Obsolete

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 5.5A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

MOSFET N-CH TO-205AF TO-39

Obsolete

Package/Case: TO-39

Continuous Drain Current (ID): 6A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

CHIP CARRIER, R-CQCC-N15

Transferred

Continuous Drain Current (ID): 5.5A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Max Operating Temperature: 125°C

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Lead Free: Contains Lead

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Mount: Through Hole

Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

HERMETIC SEALED, MODIFIED TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

TO-3, 2 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-204AA

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Omnirel

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN

HERMETIC SEALED, TO-205, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

CHIP CARRIER, R-CQCC-N15

Active

Max Operating Temperature: 150

Number of Terminals: 15

Terminal Position: QUAD

Number of Elements: 1

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

FLANGE MOUNT, O-MBFM-P2

Transferred

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 125°C

Min Operating Temperature: -55°C

Intersil

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

RoHS Compliant: No

MOSFET N-CH 200V 9A

Obsolete

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Contact Manufacturer

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Contact Manufacturer

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

Vishay(Siliconix)

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET