Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.850 X 0.385 INCH, LFG, 4 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN