746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-03, WB-16, TO-272, 16 PIN
Wide Band High Power
IC,RF AMPLIFIER,SINGLE,MOS,FLANGE MT,PLASTIC
Wide Band High Power Amplifier
MOSFET RF N-CH 28V 30W TO-272-16
Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 746-960 MHz, 30 W, 26-28 V
746MHz - 960MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-17
IGBT MODULE 1700V 335A 1400W E+
Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-35
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
Insulated Gate Bipolar Transistor, 165A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SIXPACK-17
Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-20
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-20
IGBT MODULE 1200V 90A 350W E2
IGBT MODULE 1200V 52A 225W E2
