Search Results for &quot; PSMN4R8-100BSE &quot;

Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

120A, 100V, 0.0048ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2

SMALL OUTLINE, R-PSSO-G2

Transferred

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

N-channel MOSFET, 100V, 4.8mΩ, D2PAK

D2PAK-3/2

Active

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

Pin Count: 3

N-Channel MOSFET, 100V, 4.8mΩ, D2PAK, 3-Pin

Transferred

Pin Count: 3

Search Results for "PSMN4R8-100BSE"

Filters

Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

120A, 100V, 0.0048ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2

SMALL OUTLINE, R-PSSO-G2

Transferred

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

N-channel MOSFET, 100V, 4.8mΩ, D2PAK

D2PAK-3/2

Active

Number of Terminals: 2

Min Operating Temperature: -55

Terminal Position: SINGLE

Pin Count: 3

N-Channel MOSFET, 100V, 4.8mΩ, D2PAK, 3-Pin