Search Results for "SEMIX302GB066HDS"

IGBT Module, NPT, Trench, 600V, SEMIX 2

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 320A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

IGBT, MODULE, 1.2KV, 463A

Semikron SEMiX302GAR12E4s, SEMiX2 IGBT Module, 463 A max, 1200 V, Screw Mount

IGBT, MODULE, 1.2KV, 463A

IGBT, MODULE, 1.2KV, 463A

IGBT, MODULE, 1.2KV, 448A

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

IGBT, MODULE, 1.2KV, 466A

IGBT, MODULE, 1.2KV, 466A

SEMIKRON SEMIX341D16S Bridge Rectifier Diode, Three, 1.6 V, 340 A, Module, 1.75 V, 5 Pins

Insulated Gate Bipolar Transistor, 350A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN

IGBT POWER MODULE; Transistor Polarity:N Channel; DC Collector Current:377A; Collector Emitter Saturation Voltage Vce(on):2.35V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.15V; No. of Pins:16; Current, Ifs max:2000A;RoHS Compliant: Yes

IGBT; 1200 V, 250 A @ 25 DegC; 260 A @ 80 DegC; 1.7 V @ 25 degC

Trans IGBT Module N-CH 1200V 364A 18-Pin

Trans IGBT Module N-CH 1700V 353A 29-Pin

DIODE, POWER MODULE, 232A, 1.6KV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):232A; Forward Voltage VF Max:2.09V; No. of Pins:5Pins; Operating Temperature Max:150 C; Packaging:Each ;RoHS Compliant: Yes

Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX