Power Field-Effect Transistor, 10A I(D), 200V, 0.175ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-12
Power Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SLA, SIP-12
Power Field-Effect Transistor, 5A I(D), 200V, 0.35ohm, 5-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-12