Search Results for &quot; VQ1000J &quot;

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IN-LINE, R-PDIP-T14

Obsolete

Package/Case: PDIP

Continuous Drain Current (ID): 225mA

Drain to Source Resistance: 5.5R

Drain to Source Voltage (Vdss): 60V

Stmicroelectronics

VQ1000J

Unknown

Package/Case: PDIP

Packaging: Rail/Tube

VQ1000P

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IN-LINE, R-PDIP-T14

Active

Package/Case: DIP

Continuous Drain Current (ID): 225mA

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 5.5R

VQ1000P-2

Vishay

Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP T/R

Volume Production

Package/Case: PDIP

Continuous Drain Current (ID): 225mA

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

VQ1001J

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Package/Case: PDIP

Continuous Drain Current (ID): 830mA

Drain to Source Resistance: 1R

Drain to Source Voltage (Vdss): 30V

VQ1004J

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: PDIP

Continuous Drain Current (ID): 460mA

Drain to Source Resistance: 3.5R

Drain to Source Voltage (Vdss): 60V

VQ1006J

Power Field-Effect Transistor, 0.4A I(D), 90V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IN-LINE, R-PDIP-T14

Obsolete

Max Operating Temperature: 150

Number of Terminals: 14

Terminal Position: DUAL

Number of Elements: 4

VQ1000P-E3

Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP

Obsolete

Package/Case: PDIP

Continuous Drain Current (ID): 225mA

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 5.5R

Search Results for "VQ1000J"

Filters

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IN-LINE, R-PDIP-T14

Obsolete

Package/Case: PDIP

Continuous Drain Current (ID): 225mA

Drain to Source Resistance: 5.5R

Drain to Source Voltage (Vdss): 60V

Stmicroelectronics

VQ1000J

Unknown

Package/Case: PDIP

Packaging: Rail/Tube

VQ1000P

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IN-LINE, R-PDIP-T14

Active

Package/Case: DIP

Continuous Drain Current (ID): 225mA

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 5.5R

VQ1000P-2

Vishay

Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP T/R

Volume Production

Package/Case: PDIP

Continuous Drain Current (ID): 225mA

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

VQ1001J

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Obsolete

Package/Case: PDIP

Continuous Drain Current (ID): 830mA

Drain to Source Resistance: 1R

Drain to Source Voltage (Vdss): 30V

VQ1004J

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: PDIP

Continuous Drain Current (ID): 460mA

Drain to Source Resistance: 3.5R

Drain to Source Voltage (Vdss): 60V

VQ1006J

Power Field-Effect Transistor, 0.4A I(D), 90V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IN-LINE, R-PDIP-T14

Obsolete

Max Operating Temperature: 150

Number of Terminals: 14

Terminal Position: DUAL

Number of Elements: 4

VQ1000P-E3

Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP