Small-signal switching diode uses a silicon epitaxial planar junction for fast signal switching applications. The axial DO-35 glass package has a single diode configuration with cathode band marking. The device is rated for 100 V repetitive peak reverse voltage, 300 mA continuous forward current, and 500 mW power dissipation under specified lead-temperature conditions. Reverse recovery time is specified at up to 4 ns, and diode capacitance is specified at up to 4 pF.
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| Diode Type | Small signal fast switching |
| Configuration | Single |
| Package | DO-35 (DO-204AH) |
| Repetitive Peak Reverse Voltage | 100V |
| Reverse Voltage | 75V |
| Peak Forward Surge Current | 2A |
| Repetitive Peak Forward Current | 500mA |
| Continuous Forward Current | 300mA |
| Average Forward Current | 150mA |
| Power Dissipation | 500mW |
| Forward Voltage | 1 max at IF = 10 mAV |
| Reverse Current | 25 max at VR = 20 VnA |
| Breakdown Voltage | 100 minV |
| Diode Capacitance | 4 maxpF |
| Reverse Recovery Time | 4 maxns |
| Thermal Resistance Junction to Ambient | 350K/W |
| Junction Temperature | 175°C |
| Storage Temperature Range | -65 to +150°C |
| Weight | 105 approx.mg |
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