Search Results for "2N3829"

Power Bipolar Transistor, 75V V(BR)CEO, NPN, Silicon, TO-213MA, Metal, 2 Pin, TO-66, 2 PIN

Transistor

Transistor

Small Signal Bipolar Transistor, 1.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,

Transistor

PNP SILICON CORE DRIVER60V T0-39

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, HERMETIC SEALED, METAL PACKAGE-6

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, TO-78, 8 PIN

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78

SOLID STATE 2N3866 Bipolar - RF Transistor, NPN, 30 V, 800 MHz, 5 W, 400 mA, 10 hFE

PNP SILICON DUAL AMPLIFIER TRANSISTORS

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element,

1200mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element

PNP SILICON DUAL AMPLIFIER TRANSISTORS

TRANSISTOR,PNPPNP,60V,0.05A,TO78; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:600mW; DC Collector Current:-50mA; DC Current Gain hFE:300; Transistor Case Style:TO-78; No. of Pins:7; Operating Temperature Max:200°C; MSL:-; SVHC:No SVHC (15-Jun-2015); DC Current Gain Max (hfe):300; Gain Bandwidth ft Typ:500MHz; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Transition Frequency ft:100Hz

SOLID STATE 2N3810 Bipolar Transistor Array, PNP, -60 V, 600 mW, -50 mA, 150 hFE, TO-78