Search Results for "2N3866(A)"

Power Bipolar Transistor, 75V V(BR)CEO, NPN, Silicon, TO-213MA, Metal, 2 Pin, TO-66, 2 PIN

PNP SILICON DUAL AMPLIFIER TRANSISTORS

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element,

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element

1200mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

PNP SILICON DUAL AMPLIFIER TRANSISTORS

TRANSISTOR,PNPPNP,60V,0.05A,TO78; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:600mW; DC Collector Current:-50mA; DC Current Gain hFE:300; Transistor Case Style:TO-78; No. of Pins:7; Operating Temperature Max:200°C; MSL:-; SVHC:No SVHC (15-Jun-2015); DC Current Gain Max (hfe):300; Gain Bandwidth ft Typ:500MHz; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Transition Frequency ft:100Hz

SOLID STATE 2N3810 Bipolar Transistor Array, PNP, -60 V, 600 mW, -50 mA, 150 hFE, TO-78

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, HERMETIC SEALED PACKAGE-4

1200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN

Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Junction FET, TO-92,

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element,

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element,

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,

Small Signal Field-Effect Transistor

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72

Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element,