Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18,
Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18,