
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3
For Package = SOT-32 / Material Thickness m = 33 / Dielectric Strength kV/mm = 10 / Bore Hole Diameter mm = 3.1 / Thermal Resistance K/W = 0.3