Insulated Gate Bipolar Transistor, 229A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN
Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247, 3 PIN
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Trans MOSFET N-CH 1KV 11A 3-Pin(2+Tab) D3PAK
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Trans MOSFET N-CH 1KV 33A 3-Pin(3+Tab) TO-264 MAX
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
Insulated Gate Bipolar Transistor, 148A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT, TMAX-3
Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) T-MAX
