Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
1.2mm, 1 ELEMENT, INFRARED LED, 880nm, 1.60 X 0.80 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, SMT, 2 PIN
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 22A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN