Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN
Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Power Field-Effect Transistor, 8.4A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, TO-247, 2 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN