Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon, TO-220AC, TO-220, 2 PIN
Power Field-Effect Transistor, 35A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN