Search Results for "APT5010JLL"

Trans IGBT Chip N-CH 600V 93A 3-Pin(3+Tab) TO-247

Power Field-Effect Transistor, 77A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN

Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

IGBT 1200V 75A 347W SOT227

IGBT have ultra low VCE(ON) and are ideal for low frequency applications

Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Trans MOSFET N-CH 500V 77A 3-Pin(3+Tab) TO-264 MAX

Trans IGBT Chip N-CH 1.2KV 135A 3-Pin(3+Tab) TO-264

500V 51A N-CH MOSFET, 75mR RdsOn, 290W PD

Trans IGBT Chip N-CH 600V 70A 4-Pin SOT-227

600V 50A Switching Diode, Dual Common Cathode, TO-247

Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4

Power Field-Effect Transistor, 89A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN

Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN

Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247

Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, TMAX-3

Trans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247