CGH40120F - Electronic Components Search

RF GaN HEMT 28V 120W DC-2.5GHz

440193

Active

Operating Frequency: DC - 2.5GHz

Output Power (P_sat): 120W

Drain-Source Voltage (Vds): 28V

Small Signal Gain: 19dB

RF GaN HEMT MOSFET 120W 28V 84V

Volume Production

Gain: 19dB

Output Power: 120W

Packaging: Tray

RoHS Compliant: Yes

GaN N-CH JFET 84V 12A Single 3-Pin

Active

Channel Type: N

Configuration: Single

Maximum Drain Source Voltage: 84V

Maximum Gate Source Voltage: 2V

BOARD DEMO AMP CIRCUIT CGH40120

Volume Production

Evaluation Kit: Yes

Max Operating Temperature: 150°C

Min Operating Temperature: -40°C

Operating Supply Voltage: 28V

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