Photoelectric Sensors S4 Mono 1.3Mpix, NPN C-Mount
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-2
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
900V N-Channel MOSFET, 3A, 2.3 Ohm, D2PAK, QFET
900V N-Channel MOSFET, 6.3A, 1.9 Ohm, TO-220
MOSFET N-CH 80V 9.3A TO-220
MOSFET N-CH 900V 2.8A TO-220
MOSFET N-CH 150V 4.2A TO-220F
MOSFET P-CH 100V 2.9A TO-220F
MOSFET P-CH 500V 1.03A TO-220F
MOSFET N-CH 400V 1.6A TO-220F
MOSFET N-CH 900V 2.1A TO-220F
MOSFET N-CH 200V 3.5A TO-220F
CRYSTAL 4.0 MHZ 20PF
IMAGING CAMERA CHASSIS MOUNT
FAIRCHILD SEMICONDUCTOR FQB10N20 MOSFET, N, D2-PAK
FAIRCHILD SEMICONDUCTOR FQD20N06 MOSFET, N, D-PAK
N-Channel QFET® MOSFET 400V, 16A, 270mΩ, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
