Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Conn Circular PIN 8 POS Solder Pot ST Flange Mount 8 Terminal 1 Port Geo-Marine®
Conn Circular PIN 4 POS Solder Pot ST Flange Mount 4 Terminal 1 Port Geo-Marine®
Silicon Controlled Rectifier, 180A I(T)RMS, 106000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE A47, SEMIPACK-5
LED lighted Models for Switch Push Button
Silicon Controlled Rectifier, 350A I(T)RMS, 210000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, CASE A 73A, SEMIPACK 3, 7 PIN
Switch DIP OFF ON SPST 12 Extended Slide 0.1A 20VDC J-Bend 2000Cycles 2.54mm SMD T/R
Radial Shielded Inductor 100uH 1.3A 10% Ferrite
Ind Choke Shielded Wirewound 56uH 10% 10KHz Ferrite 1.8A RDL
Ind Choke Shielded Wirewound 6.8uH 25% 10KHz Ferrite 3.9A RDL
Ind Choke Shielded Wirewound 33uH 10% 10KHz Ferrite 2.4A RDL
Insulated Gate Bipolar Transistor, 530A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29
Lug Terminal (7.7/0)AWG Copper 109.2mm Tin
IGBT MODULE 1200V 640A 2200W E+
14 SEG ALPHANUMERIC DISPLAY, HIGH EFFICIENCY RED, 13.8mm, ROHS COMPLIANT PACKAGE-18
Silicon Controlled Rectifier, 180A I(T)RMS, 106000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA, CASE A46, SEMIPACK-7
Thyristor/Diode Modules; 1.44 V(Max); 1700/1600 V (RMS)
Silicon Controlled Rectifier, 350A I(T)RMS, 210000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE A 76A, SEMIPACK 3, 5 PIN
Radial Ferrite Inductor 470uH 10% 640mA Shielded
Ind Choke Shielded Wirewound 1mH 10% 10KHz Ferrite 430mA RDL