RF Choke Wirewound 2.7uH 10% 7.96MHz 40Q-Factor Ferrite 595mA 280mOhm DCR AXL T/R
RF Choke Wirewound 82uH 10% 2.52MHz 50Q-Factor Ferrite 175mA 3.2Ohm DCR AXL T/R
RF Choke Wirewound 47uH 10% 2.52MHz 50Q-Factor Ferrite 205mA 2.3Ohm DCR AXL T/R
RF Choke Wirewound 470uH 10% 796KHz 60Q-Factor Ferrite 90mA 17.5Ohm DCR AXL T/R
RF Choke Wirewound 10uH 10% 7.96MHz 40Q-Factor Ferrite 370mA 720mOhm DCR AXL T/R
RF Choke Wirewound 22uH 10% 2.52MHz 40Q-Factor Ferrite 285mA 1.2Ohm DCR AXL T/R
RF Choke Wirewound 120uH 10% 796KHz 60Q-Factor Ferrite 160mA 3.8Ohm DCR AXL T/R
RF Choke Wirewound 120nH 20% 25.2MHz 30Q-Factor Ferrite 1.35A 85mOhm DCR AXL T/R
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204,
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Power Field-Effect Transistor, 20A I(D), 250V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
