Search Results for &quot; IRF644B_FP001 &quot;

Vishay(Siliconix)

200V N-CH MOSFET 3.3A 1.5R TO-220AB

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 3.3A

Current Rating: 3.3A

Drain to Source Resistance: 1.5R

+24

Motorola

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF634

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF620

Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF612

Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Intersil

3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

RoHS Compliant: No

FP0030K1-G

Microchip

Power Switch ICs - Power Distribution LOW VOLTAGE PROTECT SWITCH

Unknown

Package/Case: SOT-23-3

Max Operating Temperature: 125°C

Min Operating Temperature: -40°C

Max Power Dissipation: 360mW

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

+18

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6603

N-Channel MOSFET, 30V, 27A, 3.4mR Rds On, Surface Mount

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 25A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.5mR

+22

Search Results for "IRF644B_FP001"

Filters

Vishay(Siliconix)

200V N-CH MOSFET 3.3A 1.5R TO-220AB

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 3.3A

Current Rating: 3.3A

Drain to Source Resistance: 1.5R

+24

Motorola

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF634

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF620

Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF612

Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Intersil

3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

RoHS Compliant: No

FP0030K1-G

Microchip

Power Switch ICs - Power Distribution LOW VOLTAGE PROTECT SWITCH

Unknown

Package/Case: SOT-23-3

Max Operating Temperature: 125°C

Min Operating Temperature: -40°C

Max Power Dissipation: 360mW

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

+18

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6603

N-Channel MOSFET, 30V, 27A, 3.4mR Rds On, Surface Mount