Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
International Rectifier IRF634, MOSFET IRF 634 N channel TO 220 8.1A 250V
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB